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| AP04N70BI RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 2.4 4A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 4 2.5 15 33 0.26 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 100 4 4 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.8 65 Unit /W /W 200302072-1/6 Data & specifications subject to change without notice AP04N70BI Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 2.5 16.7 4.1 4.9 11 8.3 23.8 8.2 950 65 6 Max. Units 2.4 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by max. junction temperature 2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25 , IAS=4A. 3.Pulse test o Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 4 15 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=4A, VGS=0V THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/6 AP04N70BI 2.5 2 T C =25 o C 2 V G =10V V G =6.0V 1.5 T C =150 o C V G =10V V G =6.0V V G =5.0V V G =4.5V 1 ID , Drain Current (A) 1.5 V G =4.5V 1 ID , Drain Current (A) V G =5.0V 0.5 V G =4.0V V G =3.5V 0.5 V G =4.0V 0 0 1 2 3 4 5 6 7 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =2A V G =10V 1.1 2 Normalized BVDSS (V) Normalized R DS(ON) -50 0 50 100 o 150 1.6 1 1.2 0.8 0.9 0.4 0.8 0 -50 0 50 100 150 T j , Junction Temperature ( C) T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature 3/6 AP04N70BI 4.5 40 4 3.5 30 ID , Drain Current (A) 3 PD (W) 2.5 20 2 1.5 10 1 0.5 0 25 50 75 100 125 150 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 10 Normalized Thermal Response (R thjc) DUTY=0.5 0.2 100us ID (A) 1 0.1 0.1 0.05 1ms 10ms 100ms 0.02 PDM 0.1 t 0.01 1s T c =25 C Single Pulse 0.01 1 10 100 1000 T o DC 0.01 SINGLE PULSE Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 4/6 AP04N70BI 16 f=1.0MHz 10000 I D =4A 14 VGS , Gate to Source Voltage (V) 12 V DS =320V V DS =400V Ciss 10 V DS =480V 8 C (pF) 100 Coss 6 4 2 Crss 0 0 5 10 15 20 25 1 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j =150 o C IS (A) VGS(th) (V) T j = 25 o C 3 2 1 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5/6 AP04N70BI VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G 10% + 10 V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform 6/6 |
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